Invention Grant
- Patent Title: Fluorine passivation of dielectric for superconducting electronics
- Patent Title (中): 超导电子学的电介质氟化钝化
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Application No.: US14137320Application Date: 2013-12-20
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Publication No.: US09297067B2Publication Date: 2016-03-29
- Inventor: Dipankar Pramanik , Andrew Steinbach
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C23C14/14
- IPC: C23C14/14 ; C23C14/58 ; H01L23/532 ; H01L21/768 ; H01L27/18
Abstract:
An amorphous silicon (a-Si) dielectric for superconducting electronics is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. Complete layers or thinner sub-layers of a-Si are formed by physical vapor deposition at low temperatures (
Public/Granted literature
- US20150179913A1 Fluorine Passivation of Dielectric for Superconducting Electronics Public/Granted day:2015-06-25
Information query
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