Invention Grant
US09298093B2 Polymers, photoresist compositions and methods of forming photolithographic patterns
有权
聚合物，光致抗蚀剂组合物和形成光刻图案的方法
- Patent Title: Polymers, photoresist compositions and methods of forming photolithographic patterns
- Patent Title (中): 聚合物，光致抗蚀剂组合物和形成光刻图案的方法
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Application No.: US13341939Application Date: 2011-12-31
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Publication No.: US09298093B2Publication Date: 2016-03-29
- Inventor: Young Cheol Bae , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
- Applicant: Young Cheol Bae , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
- Assignee: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/20 ; G03F7/039 ; G03F7/32 ; C08F220/28 ; G03F7/004
Abstract:
Polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
Public/Granted literature
- US20120288794A1 POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS Public/Granted day:2012-11-15
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