发明授权
- 专利标题: Kernel masking of DRAM defects
- 专利标题(中): DRAM缺陷的内核屏蔽
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申请号: US14187279申请日: 2014-02-23
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公开(公告)号: US09299457B2公开(公告)日: 2016-03-29
- 发明人: Dexter T. Chun , Yanru Li , Xiangyu Dong , Jungwon Suh , Jung Pill Kim , Deepti Vijayalakshmi Sriramagiri
- 申请人: QUALCOMM INCORPORATED
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM INCORPORATED
- 当前专利权人: QUALCOMM INCORPORATED
- 当前专利权人地址: US CA San Diego
- 代理机构: Smith Risley Tempel Santos LLC
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C29/44 ; G06F11/10 ; G06F11/20 ; G06F12/02
摘要:
Systems, methods, and computer programs are disclosed for kernel masking dynamic random access memory (DRAM) defects. One such method comprises: detecting and correcting a single-bit error associated with a physical address in a dynamic random access memory (DRAM); receiving error data associated with the physical address from the DRAM; storing the received error data in a failed address table located in a non-volatile memory; and retiring a kernel page corresponding to the physical address if a number of errors associated with the physical address exceeds an error count threshold.
公开/授权文献
- US20150243373A1 KERNEL MASKING OF DRAM DEFECTS 公开/授权日:2015-08-27
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