Invention Grant
- Patent Title: Kernel masking of DRAM defects
- Patent Title (中): DRAM缺陷的内核屏蔽
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Application No.: US14187279Application Date: 2014-02-23
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Publication No.: US09299457B2Publication Date: 2016-03-29
- Inventor: Dexter T. Chun , Yanru Li , Xiangyu Dong , Jungwon Suh , Jung Pill Kim , Deepti Vijayalakshmi Sriramagiri
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Smith Risley Tempel Santos LLC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/44 ; G06F11/10 ; G06F11/20 ; G06F12/02

Abstract:
Systems, methods, and computer programs are disclosed for kernel masking dynamic random access memory (DRAM) defects. One such method comprises: detecting and correcting a single-bit error associated with a physical address in a dynamic random access memory (DRAM); receiving error data associated with the physical address from the DRAM; storing the received error data in a failed address table located in a non-volatile memory; and retiring a kernel page corresponding to the physical address if a number of errors associated with the physical address exceeds an error count threshold.
Public/Granted literature
- US20150243373A1 KERNEL MASKING OF DRAM DEFECTS Public/Granted day:2015-08-27
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