发明授权
- 专利标题： On-chip plasma charging sensor
- 专利标题（中）： 片上等离子体充电传感器
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申请号： US14323749申请日： 2014-07-03
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公开(公告)号： US09299622B2公开(公告)日： 2016-03-29
- 发明人: Jiuun-Jer Yang
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： CN201010118827 20100305
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/66 ; H01L29/788 ; H01L21/027 ; H01L21/266 ; H01L29/66 ; H01L27/115
摘要：
A device for monitoring charging effects includes a semiconductor substrate having a surface region. The device also includes first, second, and third doped regions spaced apart in the semiconductor substrate and a dielectric layer overlying the surface region. The device also includes a first gate overlying a first portion of the dielectric layer disposed between the first and the second doped regions, and a second gate overlying a second portion of the dielectric layer disposed between the second and the third doped regions, the second gate being characterized by a first surface area. Moreover, the device has a conductive layer electrically coupled to the second gate for collecting plasma charges. The conductive layer is characterized by a second surface area. The first gate is connected to a conductor that is coupled to a bias voltage, and the second gate is a floating gate that is not connected to any voltage.
公开/授权文献
- US20150079706A1 ON-CHIP PLASMA CHARGING SENSOR 公开/授权日：2015-03-19
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