发明授权
- 专利标题： Semiconductor device, manufacturing method of the same, and mobile phone
- 专利标题（中）： 半导体装置及其制造方法以及手机
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申请号： US14008240申请日： 2012-03-08
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公开(公告)号： US09299914B2公开(公告)日： 2016-03-29
- 发明人: Kengo Asai , Atsushi Isobe
- 申请人： Kengo Asai , Atsushi Isobe
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2011-081573 20110401
- 国际申请： PCT/JP2012/055970 WO 20120308
- 国际公布： WO2012/137574 WO 20121011
- 主分类号： H03H9/70
- IPC分类号： H03H9/70 ; H01L41/332 ; H01L27/06 ; H04B1/036 ; H01L23/31 ; H03H9/05 ; H01L41/09 ; H04B1/40 ; H01L23/36 ; H01L29/417 ; H01L29/66 ; H01L29/78
摘要：
A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
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