Invention Grant
- Patent Title: Crystal oscillation device and semiconductor device
- Patent Title (中): 晶体振荡器件及半导体器件
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Application No.: US14263030Application Date: 2014-04-28
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Publication No.: US09300248B2Publication Date: 2016-03-29
- Inventor: Osamu Ozawa , Masashi Horiguchi , Yuichi Okuda , Akihito Anzai
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2010-287421 20101224; JP2011-031677 20110217; JP2011-213865 20110929
- Main IPC: H03B5/36
- IPC: H03B5/36 ; H02H7/20

Abstract:
A wiring pattern for oscillation input signal and a wiring pattern for oscillation output signal are provided on a printed circuit board, and a wiring pattern for ground power source voltage is arranged in a region therebetween. A quartz crystal unit is connected between the wiring pattern for oscillation input signal and the wiring pattern for oscillation output signal and one ends of capacitors serving as load capacitors thereof are connected to the wiring pattern for ground power source voltage. Further, a wiring pattern for VSS is arranged so as to enclose these wiring patterns, and a wiring pattern for VSS is arranged also in a lower layer in addition thereto. By this means, reduction of a parasitic capacitance between an XIN node and an XOUT node, improvement in noise tolerance of these nodes and others can be achieved.
Public/Granted literature
- US20140232476A1 Crystal Oscillation Device and Semiconductor Device Public/Granted day:2014-08-21
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