Invention Grant
US09305612B2 Programmable LSI with multiple transistors in a memory element 有权
在存储元件中具有多个晶体管的可编程LSI

Programmable LSI with multiple transistors in a memory element
Abstract:
A low-power programmable LSI that can perform configuration (dynamic configuration) at high speed and can quickly start is provided. The programmable LSI includes a plurality of logic elements and a memory element for storing configuration data to be input to the plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements in accordance with the configuration data stored in the configuration memory. The memory element is formed using a storage element including a transistor whose channel is formed in an oxide semiconductor layer and a node set in a floating state when the transistor is turned off.
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