Invention Grant
- Patent Title: Programmable LSI with multiple transistors in a memory element
- Patent Title (中): 在存储元件中具有多个晶体管的可编程LSI
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Application No.: US14493737Application Date: 2014-09-23
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Publication No.: US09305612B2Publication Date: 2016-04-05
- Inventor: Yoshiyuki Kurokawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-031790 20110217
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C7/00 ; G11C7/10 ; G11C11/405 ; G11C11/4072 ; H03K19/177 ; G11C11/401

Abstract:
A low-power programmable LSI that can perform configuration (dynamic configuration) at high speed and can quickly start is provided. The programmable LSI includes a plurality of logic elements and a memory element for storing configuration data to be input to the plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements in accordance with the configuration data stored in the configuration memory. The memory element is formed using a storage element including a transistor whose channel is formed in an oxide semiconductor layer and a node set in a floating state when the transistor is turned off.
Public/Granted literature
- US20150009767A1 PROGRAMMABLE LSI Public/Granted day:2015-01-08
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