Invention Grant
- Patent Title: SRAM cell and cell layout method
- Patent Title (中): SRAM单元格和单元布局方法
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Application No.: US14283120Application Date: 2014-05-20
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Publication No.: US09305633B2Publication Date: 2016-04-05
- Inventor: Anuj Grover , Gangaikondan Subramani Visweswaran
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Schiphol
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Schiphol
- Agency: Slater & Matsil, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; G11C5/02 ; G11C11/415 ; G11C11/413 ; G11C11/419 ; G11C11/416 ; G11C11/411

Abstract:
Embodiments include an array of SRAM cells, an SRAM cell, and methods of forming the same. An embodiment is an array of static random access memory (SRAM) cells including a plurality of overlapping rectangular regions. Each of overlapping rectangular regions including an entire first SRAM cell, a portion of a second adjacent SRAM cell in a first corner region of the rectangular region, and a portion of a third adjacent SRAM cell in a second corner region of the rectangular region, the second corner region being opposite the first corner region. Embodiments also include multi-finger cell layouts.
Public/Granted literature
- US20150302917A1 SRAM Cell and Cell Layout Method Public/Granted day:2015-10-22
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