Invention Grant
- Patent Title: Seal ring structure with a v-shaped dielectric layer conformally overlapping a conductive layer
- Patent Title (中): 密封环结构具有与导电层共形重叠的v形介电层
-
Application No.: US13911062Application Date: 2013-06-05
-
Publication No.: US09305887B2Publication Date: 2016-04-05
- Inventor: Fan-Qing Zeng , Ching Hwa Tey , Xiaoqing Xu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/00
Abstract:
A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.
Public/Granted literature
- US20140361438A1 SEAL RING STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2014-12-11
Information query
IPC分类:
