Invention Grant
- Patent Title: ESD protection circuit
- Patent Title (中): ESD保护电路
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Application No.: US14635255Application Date: 2015-03-02
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Publication No.: US09305915B2Publication Date: 2016-04-05
- Inventor: Chien-Hui Chuang
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L27/02 ; H03K19/003

Abstract:
An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a first NMOS transistor coupled to a power line, a second NMOS transistor coupled between the first transistor and a ground, a detection unit, providing a detection signal when an ESD event occurs at the power line, and a trigger unit, turning on the second NMOS transistor and the first NMOS transistor in sequence in response to the detection signal, such that a discharge path is formed from the power line to the ground via the first and second NMOS transistors. The trigger unit includes a first PMOS transistor coupled between the power line and a gate of the second NMOS transistor, a fourth resistor, and a second PMOS transistor, having a gate coupled to the cathode of the diode for receiving the detection signal.
Public/Granted literature
- US20150179630A1 ESD PROTECTION CIRCUIT Public/Granted day:2015-06-25
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