Invention Grant
US09305919B2 Semiconductor devices including cell-type power decoupling capacitors
有权
半导体器件包括电池型功率去耦电容器
- Patent Title: Semiconductor devices including cell-type power decoupling capacitors
- Patent Title (中): 半导体器件包括电池型功率去耦电容器
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Application No.: US13792867Application Date: 2013-03-11
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Publication No.: US09305919B2Publication Date: 2016-04-05
- Inventor: Han-Sik Yoo , Se-Il Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0033937 20120402
- Main IPC: H01L27/13
- IPC: H01L27/13 ; H01L27/08 ; H01L27/04 ; H01L49/02

Abstract:
A semiconductor device includes an internal circuit and a cell-type power decoupling capacitor. The cell-type power decoupling capacitor is formed on a semiconductor substrate using a stack cell capacitor process. The cell-type power decoupling capacitor stabilizes a supply voltage to provide the stabilized supply voltage to the internal circuit. Accordingly, the semiconductor device including the cell-type power decoupling capacitor may be insensitive to power noise and may occupy a small area on a chip.
Public/Granted literature
- US20130256832A1 SEMICONDUCTOR DEVICES INCLUDING CELL-TYPE POWER DECOUPLING CAPACITORS Public/Granted day:2013-10-03
Information query
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