A semiconductor apparatus including a stacked capacitance structure is provided. The stacked capacitance structure includes a first inner metal layer having a first pad area adjacent to an edge of the first inner metal layer, a first insulating layer disposed on the first inner metal layer and exposing the first pad area, a second inner metal layer disposed on the first insulating layer and having a second pad area adjacent to an edge of the second inner metal layer, a second insulating layer disposed on the second inner metal layer and exposing the second pad area, and a third inner metal layer covering the second inner metal layer and including at least one first slit. The first pad area and the second pad area include a plurality of pads. The first slit corresponds to the second pad area, such that the pads on the second pad area are exposed.