Invention Grant
US09306126B2 Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
有权
具有薄金属层的氧化物作为p型和n型氮化镓的透明欧姆接触
- Patent Title: Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
- Patent Title (中): 具有薄金属层的氧化物作为p型和n型氮化镓的透明欧姆接触
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Application No.: US14330616Application Date: 2014-07-14
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Publication No.: US09306126B2Publication Date: 2016-04-05
- Inventor: Jianhua Hu , Heng-Kai Hsu , Minh Huu Le , Sandeep Nijhawan , Teresa B. Sapirman
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L33/42 ; H01L33/00 ; H01L33/32
Abstract:
Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.
Public/Granted literature
- US20160013367A1 Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride Public/Granted day:2016-01-14
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