Invention Grant
- Patent Title: Field emission device and method of fabricating the same
- Patent Title (中): 场发射装置及其制造方法
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Application No.: US13743382Application Date: 2013-01-17
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Publication No.: US09306167B2Publication Date: 2016-04-05
- Inventor: Rafael Kalish , Moshe Tordjman
- Applicant: Technion Research & Development Foundation Ltd.
- Applicant Address: IL Haifa
- Assignee: Technion Research & Development Foundation Limited
- Current Assignee: Technion Research & Development Foundation Limited
- Current Assignee Address: IL Haifa
- Main IPC: B82Y30/00
- IPC: B82Y30/00 ; H01L49/00 ; H01J1/304 ; B82Y99/00 ; B82Y10/00
Abstract:
A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.
Public/Granted literature
- US20130187123A1 FIELD EMISSION DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-07-25
Information query
