Invention Grant
- Patent Title: Schmitt trigger in FDSOI technology
- Patent Title (中): 施密特触发器采用FDSOI技术
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Application No.: US14216719Application Date: 2014-03-17
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Publication No.: US09306550B2Publication Date: 2016-04-05
- Inventor: Ravinder Kumar
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Amsterdam
- Agency: Seed IP Law Group PLLC
- Main IPC: H03K3/3565
- IPC: H03K3/3565

Abstract:
A Schmitt Trigger is implemented in FDSOI technology. The Schmitt Trigger includes a first inverting stage having an NMOS and PMOS transistor having their drains tied together. The NMOS and PMOS transistor each have a first gate coupled to the input voltage and a back gate coupled to the output of the Schmitt Trigger.
Public/Granted literature
- US20150263707A1 SCHMITT TRIGGER IN FDSOI TECHNOLOGY Public/Granted day:2015-09-17
Information query
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