Invention Grant
US09306603B2 Tunable radio frequency (RF) front-end architecture using filter having adjustable inductance and capacitance
有权
可调谐射频（RF）前端架构使用具有可调电感和电容的滤波器
- Patent Title: Tunable radio frequency (RF) front-end architecture using filter having adjustable inductance and capacitance
- Patent Title (中): 可调谐射频（RF）前端架构使用具有可调电感和电容的滤波器
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Application No.: US14297954Application Date: 2014-06-06
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Publication No.: US09306603B2Publication Date: 2016-04-05
- Inventor: Hong-Ming Lee , Kevin Hsi-huai Wang , Himanshu Khatri , Meng Li
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Smith Risley Tempel Santos LLC
- Main IPC: H04B1/00
- IPC: H04B1/00 ; H04B1/10 ; H03H7/01
Abstract:
A device includes an adjustable capacitance and a switchable inductance coupled to the adjustable capacitance and configured as a tunable resonant circuit, the switchable inductance comprising a tapped structure having a first inductance and a second inductance.
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