Invention Grant
- Patent Title: Sensor structure for sensing pressure waves and ambient pressure
- Patent Title (中): 用于感测压力波和环境压力的传感器结构
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Application No.: US14198645Application Date: 2014-03-06
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Publication No.: US09309105B2Publication Date: 2016-04-12
- Inventor: Alfons Dehe , Roland Helm
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner MBB
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/00 ; B81B7/00 ; G01L1/14 ; G01L13/02 ; H04R23/00 ; G01L9/00
Abstract:
In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive layer arranged on an opposite side of the electrode element from the first conductive layer. The first conductive layer and the second conductive layer may form a chamber. The pressure in the chamber may be lower than the pressure outside of the chamber.
Public/Granted literature
- US20150251899A1 SENSOR STRUCTURE FOR SENSING PRESSURE WAVES AND AMBIENT PRESSURE Public/Granted day:2015-09-10
Information query
IPC分类:
