Invention Grant
- Patent Title: Oxide and metal removal
- Patent Title (中): 氧化物和金属去除
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Application No.: US14288696Application Date: 2014-05-28
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Publication No.: US09309598B2Publication Date: 2016-04-12
- Inventor: Xikun Wang , Jie Liu , Anchuan Wang , Nitin K. Ingle , Jeffrey W. Anthis , Benjamin Schmiege
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C23F1/12 ; H01J37/32 ; H01L21/3213

Abstract:
Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.
Public/Granted literature
- US20150345028A1 OXIDE AND METAL REMOVAL Public/Granted day:2015-12-03
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