发明授权
- 专利标题： Surface doping and bandgap tunability in hydrogenated graphene
- 专利标题（中）： 氢化石墨烯中的表面掺杂和带隙可调性
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申请号： US13942257申请日： 2013-07-15
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公开(公告)号： US09312130B2公开(公告)日： 2016-04-12
- 发明人: Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H Houston
- 申请人： Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H Houston
- 申请人地址： US DC Washington
- 专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理机构： US Naval Research Laboratory
- 代理商 Stephen T. Hunnius
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01B13/30 ; H01B5/14 ; H01L29/16 ; H01L21/223
摘要：
A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
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