公开(公告)号：US20170194468A1

公开(公告)日：2017-07-06

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L29/45 ,  H01L29/167 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US09698254B1

公开(公告)日：2017-07-04

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/45 ,  H01L29/167 ,  H01L21/04

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US09614063B2

公开(公告)日：2017-04-04

申请号：US14629939

申请日：2015-02-24

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/308 ,  H01L29/16 ,  H01L29/45 ,  H01L29/423 ,  H01L21/02

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US20150299850A1

公开(公告)日：2015-10-22

申请号：US14657665

申请日：2015-03-13

申请人： Enrique Cobas ,  Olaf M. T. van 't Erve ,  Adam L. Friedman ,  Berend T. Jonker

发明人： Enrique Cobas ,  Olaf M. T. van 't Erve ,  Adam L. Friedman ,  Berend T. Jonker

IPC分类号： C23C16/26 ,  C23C16/455 ,  C23C16/46 ,  C23C16/44

CPC分类号： C23C16/26 ,  C23C16/0209 ,  C23C16/56 ,  G11C11/161 ,  G11C2213/35

摘要： A method of making a graphene spin filter device by chemical vapor deposition comprising providing a first crystalline ferromagnetic metal surface, performing chemical vapor deposition and growing a graphene film on the first ferromagnetic metal surface, and depositing a second ferromagnetic film on the graphene film. A graphene spin filter device wherein the graphene is grown by chemical vapor deposition comprising a first crystalline ferromagnetic metal surface, a graphene film grown by chemical vapor deposition on the first ferromagnetic metal surface, and a second ferromagnetic film on the graphene film.

摘要翻译： 一种通过化学气相沉积制造石墨烯自旋过滤器装置的方法，包括提供第一结晶铁磁金属表面，进行化学气相沉积并在第一铁磁金属表面上生长石墨烯膜，以及在石墨烯膜上沉积第二铁磁膜。 一种石墨烯自旋过滤器装置，其中通过化学气相沉积生长石墨烯，其包括第一结晶铁磁金属表面，通过化学气相沉积在第一强磁性金属表面上生长的石墨烯膜和在石墨烯膜上的第二铁磁膜。

公开(公告)号：US20140273259A1

公开(公告)日：2014-09-18

申请号：US14075840

申请日：2013-11-08

申请人： Adam L. Friedman ,  F. Keith Perkins ,  Enrique Cobas ,  Paul M. Campbell ,  Glenn G. Jernigan ,  Berend T. Jonker

发明人： Adam L. Friedman ,  F. Keith Perkins ,  Enrique Cobas ,  Paul M. Campbell ,  Glenn G. Jernigan ,  Berend T. Jonker

IPC分类号： G01N27/12 ,  G01N33/00

CPC分类号： G01N27/125 ,  B82Y15/00 ,  G01N27/02 ,  G01N33/0027 ,  G01N33/0036 ,  G01N33/0057 ,  Y10T29/49117 ,  Y10T436/17 ,  Y10T436/173845 ,  Y10T436/174614

摘要： A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

摘要翻译： 一种制备低分子材料化学气相传感器的方法，其包括去除MoS2，将MoS2的单层薄片施加到SiO 2 / Si晶片上，施加甲基丙烯酸甲酯（MMA）/聚甲基丙烯酸甲酯（PMMA）膜，限定用于沉积金属触点的沟槽 ，并在沟槽中沉积Ti / Au，Au和Pt中的一种，并产生MoS2传感器。 包括MoS2的单层薄片，SiO 2 / Si晶片中的沟槽，沟槽中的金属触点，从而产生MoS2传感器的低维材料化学气相传感器。 全频谱感测套件包括由包括石墨烯，碳纳米管，MoS2，BN和过渡金属二硫属化物族的各种低维材料制成的类似制造的平行传感器。 感应套件小巧，坚固，灵敏，低功耗，廉价，快速响应化学气相分析物。

公开(公告)号：US09312130B2

公开(公告)日：2016-04-12

申请号：US13942257

申请日：2013-07-15

申请人： Jeffrey W. Baldwin ,  Bernard R. Matis ,  James S. Burgess ,  Felipe Bulat-Jara ,  Adam L. Friedman ,  Brian H Houston

发明人： Jeffrey W. Baldwin ,  Bernard R. Matis ,  James S. Burgess ,  Felipe Bulat-Jara ,  Adam L. Friedman ,  Brian H Houston

IPC分类号： H01L21/02 ,  H01B13/30 ,  H01B5/14 ,  H01L29/16 ,  H01L21/223

CPC分类号： H01L29/1606 ,  H01B5/14 ,  H01B13/30 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02518 ,  H01L21/02527 ,  H01L21/02664 ,  H01L21/2236 ,  H01L21/3003

摘要： A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.

摘要翻译： 一种在SiO 2衬底上引入单层石墨中的带隙的方法，包括在SiO 2 / Si衬底上制备石墨烯薄片和CVD生长的石墨烯薄膜并进行石墨烯氢化的步骤。 另外，通过表面吸附物控制多数载体的类型。

公开(公告)号：US20150303059A1

公开(公告)日：2015-10-22

申请号：US14629939

申请日：2015-02-24

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/16 ,  H01L29/45 ,  H01L21/285 ,  H01L21/308

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

摘要翻译： 本公开描述了制造基于隧道势垒的电子器件的方法，其中隧道势垒和输送通道由相同的材料 - 石墨烯制成。 使用单层化学改性石墨烯片作为另一单层石墨烯片上的隧道势垒产生同质外延隧道势垒/输送装置。 该装置在异质外延装置上显示增强的自旋电子性质，并且首先将石墨烯用作隧道屏障和通道。

公开(公告)号：US09063063B2

公开(公告)日：2015-06-23

申请号：US14075840

申请日：2013-11-08

申请人： Adam L. Friedman ,  F. Keith Perkins ,  Enrique Cobas ,  Paul M Campbell ,  Glenn G. Jernigan ,  Berend T Jonker

发明人： Adam L. Friedman ,  F. Keith Perkins ,  Enrique Cobas ,  Paul M Campbell ,  Glenn G. Jernigan ,  Berend T Jonker

IPC分类号： G01N27/12 ,  G01N27/02 ,  G01N27/00 ,  G01N33/00 ,  B82Y15/00

CPC分类号： G01N27/125 ,  B82Y15/00 ,  G01N27/02 ,  G01N33/0027 ,  G01N33/0036 ,  G01N33/0057 ,  Y10T29/49117 ,  Y10T436/17 ,  Y10T436/173845 ,  Y10T436/174614

摘要： A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

摘要翻译： 一种制备低分子材料化学气相传感器的方法，其包括去除MoS2，将MoS2的单层薄片施加到SiO 2 / Si晶片上，施加甲基丙烯酸甲酯（MMA）/聚甲基丙烯酸甲酯（PMMA）膜，限定用于沉积金属触点的沟槽 ，并在沟槽中沉积Ti / Au，Au和Pt中的一种，并产生MoS2传感器。 包括MoS2的单层薄片，SiO 2 / Si晶片中的沟槽，沟槽中的金属触点，从而产生MoS2传感器的低维材料化学气相传感器。 全频谱感测套件包括由包括石墨烯，碳纳米管，MoS2，BN和过渡金属二硫属化物族的各种低维材料制成的类似制造的平行传感器。 感应套件小巧，坚固，灵敏，低功耗，廉价，快速响应化学气相分析物。

公开(公告)号：US20140080295A1

公开(公告)日：2014-03-20

申请号：US13942257

申请日：2013-07-15

申请人： Jeffrey W. Baldwin ,  Bernard R. Matis ,  James S. Burgess ,  Felipe Bulat-Jara ,  Adam L. Friedman ,  Brian H. Houston

发明人： Jeffrey W. Baldwin ,  Bernard R. Matis ,  James S. Burgess ,  Felipe Bulat-Jara ,  Adam L. Friedman ,  Brian H. Houston

IPC分类号： H01L21/02 ,  H01B5/14 ,  H01B13/30

CPC分类号： H01L29/1606 ,  H01B5/14 ,  H01B13/30 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02518 ,  H01L21/02527 ,  H01L21/02664 ,  H01L21/2236 ,  H01L21/3003

摘要： A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.

摘要翻译： 一种在SiO 2衬底上引入单层石墨中的带隙的方法，包括在SiO 2 / Si衬底上制备石墨烯薄片和CVD生长的石墨烯薄膜并进行石墨烯氢化的步骤。 另外，通过表面吸附物控制多数载体的类型。