Invention Grant
- Patent Title: Methods of fabricating memory devices having charged species
- Patent Title (中): 制造具有带电物种的记忆装置的方法
-
Application No.: US14588659Application Date: 2015-01-02
-
Publication No.: US09318321B2Publication Date: 2016-04-19
- Inventor: Roy Meade
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/02 ; H01L29/423 ; H01L29/51 ; H01L29/792 ; H01L27/115 ; H01L29/78
Abstract:
Methods for fabricating memory devices having charged species. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material.
Public/Granted literature
Information query
IPC分类:
