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US09318329B2 Methods of forming vertical cell semiconductor devices with single-crystalline channel structures 有权
用单晶通道结构形成垂直单元半导体器件的方法

Methods of forming vertical cell semiconductor devices with single-crystalline channel structures
摘要：
Methods of fabricating a vertical cell semiconductor device including forming a hole passing through a stacked structure of alternating insulating and sacrificial layers on a substrate, forming an amorphous silicon layer conforming to an inner wall of the hole, forming a silicon region on the amorphous silicon layer, and metal induced crystallizing the amorphous silicon layer via the silicon region to form a single-crystalline channel structure in the hole.
摘要（中）：

制造垂直单元半导体器件的方法包括在衬底上形成通过交替的绝缘层和牺牲层的层叠结构的孔，形成与孔的内壁一致的非晶硅层，在非晶硅层上形成硅区 并且金属诱导通过硅区域结晶非晶硅层以在孔中形成单晶通道结构。

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