Invention Grant
- Patent Title: Wafer level package without sidewall cracking
- Patent Title (中): 晶圆级封装无侧壁开裂
-
Application No.: US14702276Application Date: 2015-05-01
-
Publication No.: US09318405B2Publication Date: 2016-04-19
- Inventor: Jianwen Xu , Lizabeth Ann Keser , William Stone , Steve Joseph Bezuk , Nicholas Ka Ming Yu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L21/00 ; H01L23/31 ; H01L23/528 ; H01L23/532 ; H01L23/498 ; H01L21/78 ; H01L23/28 ; H01L21/56
Abstract:
A wafer level package device may include a molding compound that encapsulates a substrate, a back end of line and front end of line layer on the substrate and a passivation layer of a redistribution layer without encapsulating a metal layer on the passivation layer. The molding compound may eliminate sidewall chipping and cracking as well as reduce the need for back side lamination.
Public/Granted literature
- US20150318229A1 WAFER LEVEL PACKAGE AND FAN OUT RECONSTITUTION PROCESS FOR MAKING THE SAME Public/Granted day:2015-11-05
Information query
IPC分类:
