Formation of carbon-rich contact liner material

Invention Grant

US09318440B2 Formation of carbon-rich contact liner material 有权

Title translation: 富含碳的接触衬里材料的形成

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Patent Title: Formation of carbon-rich contact liner material
Patent Title (中): 富含碳的接触衬里材料的形成
Application No.: US14799116

Application Date: 2015-07-14
Publication No.: US09318440B2

Publication Date: 2016-04-19
Inventor: Huy Cao , Songkram Srivathanakul , Huang Liu , Garo Jacques Derderian , Boaz Alperson
Applicant: GLOBALFOUNDRIES Inc.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES INC.
Current Assignee: GLOBALFOUNDRIES INC.
Current Assignee Address: KY Grand Cayman
Agency: Heslin Rothenberg Farley and Mesiti PC
Agent Nicholas Mesiti
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/532 ; H01L21/768

Formation of carbon-rich contact liner material

Abstract:

Conductive contact structure of a circuit structures and methods of fabrication thereof are provided. The fabrication includes, for instance, providing at least one contact opening disposed over a semiconductor substrate; forming a carbon-rich contact liner material having a set carbon content conformally within the at least one contact opening disposed over the semiconductor substrate.

Abstract(Chinese):

提供电路结构的导电接触结构及其制造方法。该制造包括例如提供设置在半导体衬底上的至少一个接触开口; 在所述半导体衬底上设置的所述至少一个接触开口中形成具有固定碳含量的富碳接触衬垫材料。

Public/Granted literature

US20150357285A1 FORMATION OF CARBON-RICH CONTACT LINER MATERIAL Public/Granted day:2015-12-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）