Invention Grant
US09318476B2 High performance standard cell with continuous oxide definition and characterized leakage current
有权
高性能标准电池，具有连续的氧化物定义和特征泄漏电流
- Patent Title: High performance standard cell with continuous oxide definition and characterized leakage current
- Patent Title (中): 高性能标准电池，具有连续的氧化物定义和特征泄漏电流
-
Application No.: US14195525Application Date: 2014-03-03
-
Publication No.: US09318476B2Publication Date: 2016-04-19
- Inventor: Xiangdong Chen , Ohsang Kwon , Foua Vang , Animesh Datta , Seid Hadi Rasouli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/088 ; H01L21/768 ; H01L21/8234 ; H01L27/118
Abstract:
A transistor cell is provided that includes a dummy gate overlaying a continuous oxide definition (OD) region. A first portion of the OD region adjacent a first side of the dummy forms the drain. The cell includes a local interconnect structure that couples the dummy gate and a portion of the OD region adjacent a second opposing side of the dummy gate to a source voltage.
Public/Granted literature
- US20150249076A1 HIGH PERFORMANCE STANDARD CELL Public/Granted day:2015-09-03
Information query
IPC分类:
