Invention Grant
- Patent Title: Semiconductor devices having high-resistance region and methods of forming the same
- Patent Title (中): 具有高电阻区域的半导体器件及其形成方法
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Application No.: US14677289Application Date: 2015-04-02
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Publication No.: US09318482B2Publication Date: 2016-04-19
- Inventor: Jae-Hyun Yoo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2014-0114480 20140829
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L27/02 ; H01L29/06 ; H01L29/10 ; H01L29/36 ; H01L29/866

Abstract:
Provided are an electrostatic discharge (ESD) protection device having a high-resistance region and a method of forming the same. The device includes a well on a substrate. A first impurity region is formed on the well and connected to an input/output pad. A second impurity region is formed on the well, spaced apart from the first impurity region, and connected to a ground (Vss). A third impurity region is formed on the well, spaced apart from the first impurity region, and connected to the ground (Vss). An isolation layer is formed between the first impurity region and the second impurity region. A high-resistance region, which directly contacts the first impurity region and the well and has a resistance higher than the first impurity region, is formed between the first impurity region and the isolation layer. The well and the third impurity region include first conductive type impurities. The first impurity region and the second impurity region include second conductive type impurities different from the first conductive type impurities.
Public/Granted literature
- US20160064375A1 SEMICONDUCTOR DEVICES HAVING HIGH-RESISTANCE REGION AND METHODS OF FORMING THE SAME Public/Granted day:2016-03-03
Information query
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