Invention Grant
- Patent Title: Methods of detecting an etch by-product and methods of manufacturing a magnetoresistive random access memory device using the same
- Patent Title (中): 检测蚀刻副产物的方法和使用其制造磁阻随机存取存储器件的方法
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Application No.: US14449408Application Date: 2014-08-01
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Publication No.: US09318697B2Publication Date: 2016-04-19
- Inventor: Jin-Hye Bae , Won-Jun Lee , Sung-Yoon Chung , Taek-Dong Chung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0162314 20131224
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/10 ; H01L27/22
Abstract:
In a method of detecting an etch by-product, the method including forming a magnetic layer including palladium (Pd) on a substrate; etching the magnetic layer to form a magnetic layer pattern; depositing a mixture including an alkyl bromide compound on a surface of the magnetic layer pattern; and measuring a current difference between the substrate and the mixture to detect an etch by-product on the surface of the magnetic layer pattern.
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