Invention Grant
- Patent Title: Method of manufacturing a phase change memory device
- Patent Title (中): 相变存储器件的制造方法
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Application No.: US14740929Application Date: 2015-06-16
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Publication No.: US09318700B2Publication Date: 2016-04-19
- Inventor: Zhe Wu , Jeong-Hee Park , Dong-Ho Ahn , Jung-Hwan Park , Jun-Ku Ahn , Sung-Lae Cho , Hideki Horii
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0073013 20140616
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00

Abstract:
In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns.
Public/Granted literature
- US20150364678A1 METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE Public/Granted day:2015-12-17
Information query
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