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US09319613B2 Image sensor having NMOS source follower with P-type doping in polysilicon gate 有权
具有多晶硅栅P型掺杂的NMOS源极跟随器的图像传感器

Image sensor having NMOS source follower with P-type doping in polysilicon gate
Abstract:
An image sensor array has a tiling unit comprising a source follower stage coupled to buffer signals from a photodiode when the unit is read onto a sense line, the source follower stage differs from conventional sensor arrays because it uses an N-channel transistor having a P-doped polysilicon gate. In embodiments, other transistors of the array have conventional N-channel transistors with N-doped polysilicon gates.
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