Invention Grant
US09319613B2 Image sensor having NMOS source follower with P-type doping in polysilicon gate
有权
具有多晶硅栅P型掺杂的NMOS源极跟随器的图像传感器
- Patent Title: Image sensor having NMOS source follower with P-type doping in polysilicon gate
- Patent Title (中): 具有多晶硅栅P型掺杂的NMOS源极跟随器的图像传感器
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Application No.: US14097779Application Date: 2013-12-05
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Publication No.: US09319613B2Publication Date: 2016-04-19
- Inventor: Tiejun Dai
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lathrop & Gage LLP
- Main IPC: H04N5/378
- IPC: H04N5/378 ; H01L27/146

Abstract:
An image sensor array has a tiling unit comprising a source follower stage coupled to buffer signals from a photodiode when the unit is read onto a sense line, the source follower stage differs from conventional sensor arrays because it uses an N-channel transistor having a P-doped polysilicon gate. In embodiments, other transistors of the array have conventional N-channel transistors with N-doped polysilicon gates.
Public/Granted literature
- US20150163428A1 Image Sensor Having NMOS Source Follower With P-Type Doping In Polysilicon Gate Public/Granted day:2015-06-11
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