Invention Grant
US09321629B2 Method and structure for adding mass with stress isolation to MEMS structures
有权
向MEMS结构增加应力隔离质量的方法和结构
- Patent Title: Method and structure for adding mass with stress isolation to MEMS structures
- Patent Title (中): 向MEMS结构增加应力隔离质量的方法和结构
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Application No.: US14217376Application Date: 2014-03-17
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Publication No.: US09321629B2Publication Date: 2016-04-26
- Inventor: Daniel N. Koury, Jr.
- Applicant: mCube Inc.
- Applicant Address: US CA San Jose
- Assignee: mCube Inc.
- Current Assignee: mCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; H01L27/146 ; G01P15/08
Abstract:
A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.
Public/Granted literature
- US20140199799A1 METHOD AND STRUCTURE FOR ADDING MASS WITH STRESS ISOLATION TO MEMS STRUCTURES Public/Granted day:2014-07-17
Information query
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