Invention Grant
- Patent Title: Method of manufacturing flip-chip type semiconductor device
- Patent Title (中): 制造倒装芯片型半导体器件的方法
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Application No.: US14373030Application Date: 2013-01-15
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Publication No.: US09324616B2Publication Date: 2016-04-26
- Inventor: Goji Shiga , Fumiteru Asai , Naohide Takamoto
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki-shi
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2012-008148 20120118
- International Application: PCT/JP2013/050580 WO 20130115
- International Announcement: WO2013/108755 WO 20130725
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48 ; H01L21/78 ; H01L23/00 ; H01L23/544 ; H01L21/683

Abstract:
An object of the present invention is to provide a method of manufacturing a flip-chip type semiconductor device with a simplified process, in which various types of information are supplied in a visually recognizable manner. The present invention relates to a method of manufacturing a flip-chip type semiconductor device comprising: a step A of laminating on a semiconductor wafer a film for the backside of a flip-chip type semiconductor, in which the film is to be formed on the backside of a semiconductor element that is flip-chip connected onto an adherend; a step B of dicing the semiconductor wafer; and a step C of laser marking the film for the backside of a flip-chip type semiconductor, wherein the film for the backside of a flip-chip type semiconductor in the step C is uncured.
Public/Granted literature
- US20140361443A1 METHOD OF MANUFACTURING FLIP-CHIP TYPE SEMICONDUCTOR DEVICE Public/Granted day:2014-12-11
Information query
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