公开(公告)号：US09050773B2

公开(公告)日：2015-06-09

申请号：US14052154

申请日：2013-10-11

Applicant: Nitto Denko Corporation

Inventor： Fumiteru Asai ,  Goji Shiga ,  Naohide Takamoto

IPC: B32B7/12 ,  B32B27/00 ,  B32B7/02 ,  B32B27/08 ,  B32B9/00 ,  B32B33/00 ,  B44C5/08 ,  B32B7/06 ,  C09J7/02 ,  C09J201/00 ,  H01L21/68 ,  H01L21/683 ,  H01L21/56 ,  H01L23/00

CPC classification number: B32B7/06 ,  B32B7/02 ,  B32B7/12 ,  C09J7/20 ,  C09J201/00 ,  H01L21/563 ,  H01L21/68 ,  H01L21/6836 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/8101 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2924/12042 ,  Y10T428/24942 ,  Y10T428/26 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

公开(公告)号：US10211083B2

公开(公告)日：2019-02-19

申请号：US14191562

申请日：2014-02-27

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: H01L21/683 ,  H01L23/31 ,  H01L23/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.

公开(公告)号：US09761475B2

公开(公告)日：2017-09-12

申请号：US14624702

申请日：2015-02-18

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC: C09J7/02 ,  H01L21/04 ,  H01L21/683 ,  H01L21/56 ,  H01L23/29 ,  H01L23/00 ,  B32B37/12 ,  B32B38/00 ,  B32B38/10 ,  H01L23/31 ,  H01L23/544 ,  C09J165/00

CPC classification number: H01L21/6836 ,  B32B37/1284 ,  B32B38/0004 ,  B32B38/10 ,  B32B2405/00 ,  B32B2457/14 ,  C09J7/20 ,  C09J165/00 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/5448 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/73204 ,  H01L2224/81095 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1075 ,  Y10T156/1077 ,  Y10T156/1082 ,  Y10T156/1093 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/1495 ,  Y10T428/15 ,  Y10T428/21 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099

Abstract: The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.

公开(公告)号：US09324616B2

公开(公告)日：2016-04-26

申请号：US14373030

申请日：2013-01-15

Applicant: NITTO DENKO CORPORATION

Inventor： Goji Shiga ,  Fumiteru Asai ,  Naohide Takamoto

IPC: H01L21/44 ,  H01L23/48 ,  H01L21/78 ,  H01L23/00 ,  H01L23/544 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/6836 ,  H01L23/544 ,  H01L23/562 ,  H01L23/564 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54413 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3512 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: An object of the present invention is to provide a method of manufacturing a flip-chip type semiconductor device with a simplified process, in which various types of information are supplied in a visually recognizable manner. The present invention relates to a method of manufacturing a flip-chip type semiconductor device comprising: a step A of laminating on a semiconductor wafer a film for the backside of a flip-chip type semiconductor, in which the film is to be formed on the backside of a semiconductor element that is flip-chip connected onto an adherend; a step B of dicing the semiconductor wafer; and a step C of laser marking the film for the backside of a flip-chip type semiconductor, wherein the film for the backside of a flip-chip type semiconductor in the step C is uncured.

Abstract translation: 本发明的目的是提供一种以简化的处理制造倒装芯片型半导体器件的方法，其中以视觉可识别的方式提供各种类型的信息。 本发明涉及一种制造倒装芯片型半导体器件的方法，包括：步骤A，在半导体晶片上层叠用于倒装芯片型半导体背面的膜，其中将形成膜 将倒装芯片连接到被粘物上的半导体元件的背面; 切割半导体晶片的步骤B; 以及激光标记用于倒装芯片型半导体的背面的膜的步骤C，其中在步骤C中用于倒装芯片型半导体的背面的膜未固化。

公开(公告)号：US20140361443A1

公开(公告)日：2014-12-11

申请号：US14373030

申请日：2013-01-15

Applicant: NITTO DENKO CORPORATION

Inventor： Goji Shiga ,  Fumiteru Asai ,  Naohide Takamoto

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/544

CPC classification number: H01L21/78 ,  H01L21/6836 ,  H01L23/544 ,  H01L23/562 ,  H01L23/564 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54413 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3512 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

Abstract: An object of the present invention is to provide a method of manufacturing a flip-chip type semiconductor device with a simplified process, in which various types of information are supplied in a visually recognizable manner. The present invention relates to a method of manufacturing a flip-chip type semiconductor device comprising: a step A of laminating on a semiconductor wafer a film for the backside of a flip-chip type semiconductor, in which the film is to be formed on the backside of a semiconductor element that is flip-chip connected onto an adherend; a step B of dicing the semiconductor wafer; and a step C of laser marking the film for the backside of a flip-chip type semiconductor, wherein the film for the backside of a flip-chip type semiconductor in the step C is uncured.

Abstract translation: 本发明的目的是提供一种以简化的处理制造倒装芯片型半导体器件的方法，其中以视觉可识别的方式提供各种类型的信息。 本发明涉及一种制造倒装芯片型半导体器件的方法，包括：步骤A，在半导体晶片上层叠用于倒装芯片型半导体背面的膜，其中将形成膜 将倒装芯片连接到被粘物上的半导体元件的背面; 切割半导体晶片的步骤B; 以及激光标记用于倒装芯片型半导体的背面的膜的步骤C，其中在步骤C中用于倒装芯片型半导体的背面的膜未固化。

公开(公告)号：US09478454B2

公开(公告)日：2016-10-25

申请号：US14221314

申请日：2014-03-21

Applicant: NITTO DENKO CORPORATION

Inventor： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

IPC: H01L21/00 ,  H01L21/683 ,  H01L23/544 ,  C09J7/02 ,  H01L21/78 ,  H01L23/00

CPC classification number: H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/78 ,  H01L23/544 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2223/54486 ,  H01L2224/16225 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/28 ,  H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

Abstract translation: 本发明提供了一种用于半导体背面的切割带集成膜，包括用于倒装芯片型半导体背表面的膜，用于保护连接到被粘物上的半导体元件倒装芯片的后表面和切割带，切割带 包括基材和设置在基材上的压敏粘合剂层，在压敏粘合剂层上形成用于倒装芯片型半导体背表面的膜，其中压敏粘合剂层是可辐射固化压力 敏感粘合剂层，其通过用辐射线照射而降低了对于倒装芯片型半导体背表面的膜的压敏粘合力。