Invention Grant
- Patent Title: High mobility transistors
- Patent Title (中): 高迁移率晶体管
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Application No.: US14573021Application Date: 2014-12-17
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Publication No.: US09324717B2Publication Date: 2016-04-26
- Inventor: Hiroaki Niimi , Manoj Mehrotra , Rick L. Wise
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/092 ; H01L21/8238 ; H01L29/16 ; H01L29/20
Abstract:
An integrated circuit containing an n-channel finFET and a p-channel finFET has a dielectric layer over a silicon substrate. The fins of the finFETs have semiconductor materials with higher mobilities than silicon. A fin of the n-channel finFET is on a first silicon-germanium buffer in a first trench through the dielectric layer on the substrate. A fin of the p-channel finFET is on a second silicon-germanium buffer in a second trench through the dielectric layer on the substrate. The fins extend at least 10 nanometers above the dielectric layer. The fins are formed by epitaxial growth on the silicon-germanium buffers in the trenches in the dielectric layer, followed by CMP planarization down to the dielectric layer. The dielectric layer is recessed to expose the fins. The fins may be formed concurrently or separately.
Public/Granted literature
- US20150187773A1 HIGH MOBILITY TRANSISTORS Public/Granted day:2015-07-02
Information query
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