Invention Grant
- Patent Title: Gallium-nitride-based light emitting diodes with multiple potential barriers
- Patent Title (中): 具有多个势垒的基于氮化镓的发光二极管
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Application No.: US13743728Application Date: 2013-01-17
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Publication No.: US09324907B2Publication Date: 2016-04-26
- Inventor: Meng-Hsin Yeh , Jyh-Chiarng Wu , Guojun Lu
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201210017954 20120120
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/00 ; H01L29/15 ; H01L21/02
Abstract:
A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced.
Public/Granted literature
- US20130187125A1 GALLIUM-NITRIDE-BASED LIGHT EMITTING DIODES WITH MULTIPLE POTENTIAL BARRIERS Public/Granted day:2013-07-25
Information query
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