发明授权
- 专利标题： Material quality, suspended material structures on lattice-mismatched substrates
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申请号： US14512158申请日： 2014-10-10
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公开(公告)号： US09330907B2公开(公告)日： 2016-05-03
- 发明人: Robert Chen , James S. Harris, Jr. , Suyog Gupta
- 申请人： The Board of Trustees of the Leland Stanford Junior University
- 申请人地址： US CA Palo Alto
- 专利权人： The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人： The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人地址： US CA Palo Alto
- 代理机构： Lumen Patent Firm
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/00 ; H01L29/161 ; B82Y10/00 ; B82Y40/00 ; H01L29/06 ; H01S5/34 ; H01L21/3065 ; B81C1/00 ; H01S5/10
摘要：
Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
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