Invention Grant
- Patent Title: IC wafer having electromagnetic shielding effects and method for making the same
- Patent Title (中): 具有电磁屏蔽效果的IC晶片及其制造方法
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Application No.: US14092795Application Date: 2013-11-27
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Publication No.: US09331024B2Publication Date: 2016-05-03
- Inventor: Yao-Hsiang Chen , Tsang-Yu Liu , Yen-Shih Ho , Shu-Ming Chang
- Applicant: XINTEC INC.
- Applicant Address: TW Taoyuan
- Assignee: XINTEC INC.
- Current Assignee: XINTEC INC.
- Current Assignee Address: TW Taoyuan
- Agency: Liu & Liu
- Priority: CN201110071300 20110322
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/71 ; H01L23/31 ; H01L23/00

Abstract:
An IC wafer and the method of making the IC wafer, the IC wafer includes an integrated circuit layer having a plurality of solder pads and an insulated layer arranged thereon, a plurality of through holes cut through the insulated layer corresponding to the solder pads respectively for the implantation of a package layer, and an electromagnetic shielding layer formed on the top surface of the insulated layer and electrically isolated from the solder pads of the integrated circuit layer for electromagnetic shielding. Thus, the integrated circuit does not require any further shielding mask, simplifying the fabrication. Further, the design of the through holes facilitates further packaging process.
Public/Granted literature
- US20140091441A1 IC WAFER HAVING ELECTROMAGNETIC SHIELDING EFFECTS AND METHOD FOR MAKING THE SAME Public/Granted day:2014-04-03
Information query
IPC分类: