Chip package and method for forming the same

    公开(公告)号:US12237354B2

    公开(公告)日:2025-02-25

    申请号:US17683917

    申请日:2022-03-01

    Applicant: XINTEC INC.

    Abstract: Chip packages and methods for forming the same are provided. The method includes providing a substrate having upper and lower surfaces, and having a chip region and a scribe-line region surrounding the chip region. The substrate has a dielectric layer on its upper surface. A masking layer is formed over the substrate to cover the dielectric layer. The masking layer has a first opening exposing the dielectric layer and extending in the extending direction of the scribe-line region to surround the chip region. An etching process is performed on the dielectric layer directly below the first opening, to form a second opening that is in the dielectric layer directly below the first opening. The masking layer is removed to expose the dielectric layer having the second opening. A dicing process is performed on the substrate through the second opening.

    Chip package and manufacturing method thereof

    公开(公告)号:US11164853B1

    公开(公告)日:2021-11-02

    申请号:US17170482

    申请日:2021-02-08

    Applicant: XINTEC INC.

    Abstract: A chip package includes a first chip, a second chip, a first molding compound, and a first distribution line. The second chip vertically or laterally overlaps the first chip. The second chip has a conductive pad. The first molding compound covers the first and second chips, and surrounds the second chip. The first molding compound has a first through hole. The conductive pad is in the first through hole. The first distribution line is located on a surface of the first molding compound facing away from the second chip, and electrically connects the conductive pad in the first through hole.

    Semiconductor structure having stage difference surface and manufacturing method thereof
    10.
    发明授权
    Semiconductor structure having stage difference surface and manufacturing method thereof 有权
    具有台阶差的半导体结构及其制造方法

    公开(公告)号:US09275963B2

    公开(公告)日:2016-03-01

    申请号:US14199640

    申请日:2014-03-06

    Applicant: XINTEC INC.

    Abstract: A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.

    Abstract translation: 半导体结构包括晶片,至少一个非金属氧化物层,焊盘,钝化层,隔离层和导电层。 晶片具有连接在第二和第三表面之间的第一表面,第二表面,第三表面,第一阶段差异表面以及连接在第一和第三表面之间的第二阶段差异表面。 非金属氧化物层位于晶片的第一表面上。 垫位于非金属氧化物层上并电连接到晶片。 钝化层位于非金属氧化物层上。 隔离层位于钝化层,非金属氧化物层,晶片的第一,第二和第三表面以及晶片的第一和第二级差分表面上。 导电层位于隔离层上并电接触焊盘。

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