Invention Grant
- Patent Title: Electric field gap device and manufacturing method
- Patent Title (中): 电场间隙装置及制造方法
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Application No.: US14293146Application Date: 2014-06-02
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Publication No.: US09331028B2Publication Date: 2016-05-03
- Inventor: Michael In 'T Zandt , Olaf Wunnicke , Klaus Reimann
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent Rajeev Madnawat
- Priority: EP13173864 20130626
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01J9/02 ; H01L27/02 ; H01L21/74 ; H01L21/762 ; H01L29/06
Abstract:
Substrate material is oxidized around side walls of a set of channels. A shielding structure means there is more oxide growth at the top than the bottom with the result that the non-oxidized substrate material area between the channels forms a tapered shape with a pointed tip at the top. These pointed substrate areas are then used to form cathodes.
Public/Granted literature
- US20150001671A1 ELECTRIC FIELD GAP DEVICE AND MANUFACTURING METHOD Public/Granted day:2015-01-01
Information query
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