公开(公告)号：US09236734B2

公开(公告)日：2016-01-12

申请号：US14301445

申请日：2014-06-11

Applicant: NXP B.V.

Inventor： Michael in 't Zandt ,  Klaus Reimann ,  Olaf Wunnicke

IPC: H02H9/00 ,  H02H9/06 ,  H01L23/60 ,  H01L27/02 ,  H01J9/02 ,  H01J9/18

CPC classification number: H02H9/06 ,  H01J9/025 ,  H01J9/18 ,  H01L23/60 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Abstract translation: 本发明提供一种形成诸如横向场发射ESD保护结构的电场间隙器件的方法，其中在电介质层之间形成阴极层。 形成阳极通道并且衬有牺牲介电层。 在阳极通道中形成导电阳极柱，然后在阳极柱附近刻蚀牺牲介电层。 蚀刻离开阴极层的悬浮部分，其限定与相邻阳极柱的横向间隙。 该部分具有由阴极层的角部限定的尖端面，并且可以精确地限定横向间隙，因为其对应于牺牲介电层的厚度。

公开(公告)号：US09190237B1

公开(公告)日：2015-11-17

申请号：US14261246

申请日：2014-04-24

Applicant: NXP B.V.

Inventor： Klaus Reimann ,  Olaf Wunnicke ,  Michael in 't Zandt

IPC: H01J9/00 ,  H01J9/12 ,  H01J9/02 ,  H01L27/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/308 ,  H01J9/24 ,  H01J19/24 ,  H01J19/54 ,  H01J21/04 ,  H01L27/0248

Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.

Abstract translation: 用于形成用于静电放电装置的场致发射二极管的方法的实施例包括形成第一电极，牺牲层和第二电极。 牺牲层分离第一和第二电极。 该方法还包括通过去除牺牲层在第一和第二电极之间形成空腔。 腔分离第一和第二电极。 该方法还包括在形成第一和第二电极之后，通过至少一个进入孔，在第一和第二电极中的至少一个上沉积电子发射材料。 进入孔远离第一和第二电极上的电子发射位置。

公开(公告)号：US20150002966A1

公开(公告)日：2015-01-01

申请号：US14301445

申请日：2014-06-11

Applicant: NXP B.V.

Inventor： Michael In 't Zandt ,  Klaus Reimann ,  Olaf Wunnicke

IPC: H02H9/06 ,  H01J9/18 ,  H01J9/02

CPC classification number: H02H9/06 ,  H01J9/025 ,  H01J9/18 ,  H01L23/60 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Abstract translation: 本发明提供一种形成诸如横向场发射ESD保护结构的电场间隙器件的方法，其中在电介质层之间形成阴极层。 形成阳极通道并且衬有牺牲介电层。 在阳极通道中形成导电阳极柱，然后在阳极柱附近刻蚀牺牲介电层。 蚀刻离开阴极层的悬浮部分，其限定与相邻阳极柱的横向间隙。 该部分具有由阴极层的角部限定的尖端面，并且可以精确地限定横向间隙，因为其对应于牺牲介电层的厚度。

公开(公告)号：US09696390B2

公开(公告)日：2017-07-04

申请号：US14741285

申请日：2015-06-16

Applicant: NXP B.V.

Inventor： Victor Zieren ,  Olaf Wunnicke ,  Klaus Reimann

IPC: H01L27/22 ,  G01R33/06 ,  G01R33/02 ,  H01L43/02 ,  H01L43/08

CPC classification number: G01R33/066 ,  G01R33/0206 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104). On the surface (104) is arranged a central emitter structure (110, 210, 310) formed substantially mirror symmetrical with respect to a symmetry plane (106, 206, 306) that is substantially perpendicular to the surface (104, 204, 304), and a first and a second collector structure (116, 216, 316; 118, 218, 318), each of which is arranged spaced apart from the emitter structure (110, 210, 310) and which are arranged on opposite sides of the symmetry plane (106, 206, 306) so as to be substantially mirror images of each other. The first magnetic field sensor (100) is operated double-sided in that its first collector structure (116) and its emitter structure (110) are externally connected via a first read-out circuitry and its second collector structure (118) and its emitter structure (110) are externally connected via a second read-out circuitry. The second magnetic field sensor (200) is operated single-sided in that its first collector structure (216) and its emitter structure (210) are externally connected via a third read-out circuitry. The third magnetic field sensor (300) is operated single-sided in that its second collector structure (318) and its emitter structure (310) are externally connected via a fourth read-out circuitry.

公开(公告)号：US20140366641A1

公开(公告)日：2014-12-18

申请号：US14300825

申请日：2014-06-10

Applicant: NXP B.V.

Inventor： Friso Jedema ,  Casper van der Avoort ,  Stephan Heil ,  Kim Phan Le ,  Olaf Wunnicke

IPC: G01F1/58

CPC classification number: G01F25/0007 ,  G01F1/56

Abstract: Flow sensors for measuring the flow of an ion-containing fluid may be implemented using mechanical or electrical techniques. Mechanical flow sensors are have moving parts and therefore may be unreliable after some time and are expensive to manufacture. Hall-effect type flow sensors typically require a reversible magnetic field to compensate for electrochemical effects. A flow meter including such a sensor uses an electromagnet. A flow sensor (100) is described using a capacitive sensor (10) and processor (12) to determine the flow rate from a change in capacitance and a magnetic field. Such a flow sensor may be implemented using CMOS technology. The flow sensor may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Abstract translation: 用于测量含离子流体的流量的流量传感器可以使用机械或电气技术来实现。 机械流量传感器具有移动部件，因此在一段时间后可能不可靠，制造成本高。 霍尔效应型流量传感器通常需要可逆磁场来补偿电化学效应。 包括这种传感器的流量计使用电磁体。 使用电容传感器（10）和处理器（12）来描述流量传感器（100），以根据电容和磁场的变化确定流量。 这样的流量传感器可以使用CMOS技术来实现。 流量传感器可以在由永磁体产生的磁场中操作，并可靠地测量流量。

公开(公告)号：US09331028B2

公开(公告)日：2016-05-03

申请号：US14293146

申请日：2014-06-02

Applicant: NXP B.V.

Inventor： Michael In 'T Zandt ,  Olaf Wunnicke ,  Klaus Reimann

IPC: H01L23/60 ,  H01J9/02 ,  H01L27/02 ,  H01L21/74 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L23/60 ,  H01J9/025 ,  H01L21/74 ,  H01L21/76205 ,  H01L27/0288 ,  H01L29/0615 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Substrate material is oxidized around side walls of a set of channels. A shielding structure means there is more oxide growth at the top than the bottom with the result that the non-oxidized substrate material area between the channels forms a tapered shape with a pointed tip at the top. These pointed substrate areas are then used to form cathodes.

Abstract translation: 衬底材料在一组通道的侧壁周围被氧化。 屏蔽结构意味着在顶部比底部存在更多的氧化物生长，结果通道之间的未氧化的衬底材料区域形成具有尖端在顶部的锥形形状。 然后将这些尖锐的基底区域用于形成阴极。

公开(公告)号：US20150311024A1

公开(公告)日：2015-10-29

申请号：US14261246

申请日：2014-04-24

Applicant: NXP B.V.

Inventor： Klaus Reimann ,  Olaf Wunnicke ,  Michael in 't Zandt

IPC: H01J9/02 ,  H01L27/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/308 ,  H01J9/24 ,  H01J19/24 ,  H01J19/54 ,  H01J21/04 ,  H01L27/0248

Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.

Abstract translation: 用于形成用于静电放电装置的场致发射二极管的方法的实施例包括形成第一电极，牺牲层和第二电极。 牺牲层分离第一和第二电极。 该方法还包括通过去除牺牲层在第一和第二电极之间形成空腔。 腔分离第一和第二电极。 该方法还包括在形成第一和第二电极之后，通过至少一个进入孔，在第一和第二电极中的至少一个上沉积电子发射材料。 进入孔远离第一和第二电极上的电子发射位置。

公开(公告)号：US08981442B2

公开(公告)日：2015-03-17

申请号：US14108106

申请日：2013-12-16

Applicant: NXP B.V.

Inventor： Victor Zieren ,  Anco Heringa ,  Olaf Wunnicke ,  Jan Slotboom ,  Robert Hendrikus Margaretha van Veldhoven ,  Jan Claes

IPC: H01L29/82 ,  H01L43/02 ,  G01R33/06 ,  H01L29/735 ,  H01L29/861

CPC classification number: H01L43/02 ,  G01R33/066 ,  H01L29/735 ,  H01L29/82 ,  H01L29/8611

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract translation: 公开了一种半导体磁场传感器，其包括在衬底层顶部的半导体阱。 半导体阱包括第一集电区域和第二集电区域以及放置在第一集电区域和第二集电区域之间的电流发射区域。 半导体阱还包括第一MOS结构，其具有位于第一集电区和电流发射区之间的第一栅极端子和第二MOS结构，具有位于电流发射区和第二电流之间的第二栅极端 收集区域。 在操作中，第一栅极端子和第二栅极端子被偏置以增加第一电流和第二电流的偏转长度。 偏转长度垂直于由半导体磁场传感器的表面限定并平行于磁场的平面。

公开(公告)号：US20140175528A1

公开(公告)日：2014-06-26

申请号：US14108106

申请日：2013-12-16

Applicant: NXP B.V.

Inventor： Victor Zieren ,  Anco Heringa ,  Olaf Wunnicke ,  Jan Slotboom ,  Robert Hendrikus Margaretha van Veldhoven ,  Jan Claes

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G01R33/066 ,  H01L29/735 ,  H01L29/82 ,  H01L29/8611

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract translation: 公开了一种半导体磁场传感器，其包括在衬底层顶部的半导体阱。 半导体阱包括第一集电区域和第二集电区域以及放置在第一集电区域和第二集电区域之间的电流发射区域。 半导体阱还包括第一MOS结构，其具有位于第一集电区和电流发射区之间的第一栅极端子和第二MOS结构，具有位于电流发射区和第二电流之间的第二栅极端 收集区域。 在操作中，第一栅极端子和第二栅极端子被偏置以增加第一电流和第二电流的偏转长度。 偏转长度垂直于由半导体磁场传感器的表面限定并平行于磁场的平面。

公开(公告)号：US09410839B2

公开(公告)日：2016-08-09

申请号：US14300825

申请日：2014-06-10

Applicant: NXP B.V.

Inventor： Friso Jedema ,  Casper van der Avoort ,  Stephan Heil ,  Kim Phan Le ,  Olaf Wunnicke

IPC: G01F1/56 ,  G01F25/00

CPC classification number: G01F25/0007 ,  G01F1/56

Abstract: A method and apparatus for measuring the rate of flow of an ion-containing fluid in a channel are disclosed herein. The apparatus includes a captive sensor operable to detect changes in capacitance value due to the deflection of the ions in the fluid by a magnetic field, and a processor operable to determine a flow speed of fluid from the detected change in capacitance value and a predetermined value of magnetic field strength. Such apparatus may be implemented using CMOS technology. The apparatus may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Abstract translation: 本文公开了一种用于测量通道中含离子的流体的流速的方法和装置。 该装置包括可操作以检测由于磁场中的流体中的离子的偏转导致的电容值变化的俘获传感器，以及可操作以从检测到的电容值的变化和预定值确定流体的流速的处理器 的磁场强度。 这样的装置可以使用CMOS技术来实现。 该装置可以在由永磁体产生的磁场中操作，并可靠地测量流量。