发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11924691申请日： 2007-10-26
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公开(公告)号： US09331057B2公开(公告)日： 2016-05-03
- 发明人: Thorsten Meyer , Grit Sommer , Ralf Plieninger
- 申请人： Thorsten Meyer , Grit Sommer , Ralf Plieninger
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L25/16 ; H01L23/522 ; H01L23/64 ; H01L23/00 ; H01L25/00 ; H01L49/02 ; H01L21/56
摘要：
A semiconductor device is disclosed. One embodiment provides a semiconductor chip. The semiconductor chip includes a first electrode of a capacitor. An insulating layer is arranged on top of the first electrode. A second electrode of the capacitor is applied over the insulating layer, wherein the second electrode is made of a conductive layer arranged over the semiconductor chip.
公开/授权文献
- US20090108401A1 SEMICONDUCTOR DEVICE 公开/授权日：2009-04-30
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