Invention Grant
US09331073B2 Epitaxially grown quantum well finFETs for enhanced pFET performance
有权
用于增强pFET性能的外延生长量子阱finFET
- Patent Title: Epitaxially grown quantum well finFETs for enhanced pFET performance
- Patent Title (中): 用于增强pFET性能的外延生长量子阱finFET
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Application No.: US14497380Application Date: 2014-09-26
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Publication No.: US09331073B2Publication Date: 2016-05-03
- Inventor: Marc A. Bergendahl , James J. Demarest , Hong He , Seth L. Knupp , Raghavasimhan Sreenivasan , Sean Teehan , Allan W. Upham , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent David Zwick; Steven Meyers
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/04 ; H01L29/12 ; H01L29/06 ; H01L21/8234 ; H01L29/66 ; H01L21/02 ; H01L21/762
Abstract:
A method of forming a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The method may include: forming fins in a {100} crystallographic oriented substrate; forming a conformal well on the fins using epitaxial growth; and forming a conformal barrier on the conformal well using epitaxial growth.
Public/Granted literature
- US20160093613A1 EPITAXIALLY GROWN QUANTUM WELL FINFETS FOR ENHANCED PFET PERFORMANCE Public/Granted day:2016-03-31
Information query
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