Invention Grant
US09331202B2 Replacement gate structure on FinFET devices with reduced size fin in the channel region
有权
FinFET器件上的替代栅极结构，在沟道区域具有减小尺寸的鳍
- Patent Title: Replacement gate structure on FinFET devices with reduced size fin in the channel region
- Patent Title (中): FinFET器件上的替代栅极结构，在沟道区域具有减小尺寸的鳍
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Application No.: US14731876Application Date: 2015-06-05
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Publication No.: US09331202B2Publication Date: 2016-05-03
- Inventor: Bingwu Liu , Hui Zang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/84 ; H01L29/423 ; H01L21/8234
Abstract:
One illustrative method disclosed herein includes, among other things, forming a fin protection layer around a fin, forming a sacrificial gate electrode above a section of the fin protection layer, forming at least one sidewall spacer adjacent the sacrificial gate electrode, removing the sacrificial gate electrode to define a gate cavity that exposes a portion of the fin protection layer, oxidizing at least the exposed portion of the fin protection layer to thereby form an oxidized portion of the fin protection layer, and removing the oxidized portion of the fin protection layer so as to thereby expose a surface of the fin within the gate cavity.
Public/Granted literature
- US20150364595A1 REPLACEMENT GATE STRUCTURE ON FINFET DEVICES WITH REDUCED SIZE FIN IN THE CHANNEL REGION Public/Granted day:2015-12-17
Information query
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