Invention Grant
US09335206B2 Wave front aberration metrology of optics of EUV mask inspection system
有权
EUV面罩检测系统光学波前像差计量学
- Patent Title: Wave front aberration metrology of optics of EUV mask inspection system
- Patent Title (中): EUV面罩检测系统光学波前像差计量学
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Application No.: US14010484Application Date: 2013-08-26
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Publication No.: US09335206B2Publication Date: 2016-05-10
- Inventor: Qiang Zhang , Yanwei Liu , Abdurrahman Sezginer
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Kwan & Olynick LLP
- Main IPC: G01J1/00
- IPC: G01J1/00 ; G01J1/42 ; G21K7/00 ; G02B5/08

Abstract:
Disclosed is test structure for measuring wave-front aberration of an extreme ultraviolet (EUV) inspection system. The test structure includes a substrate formed from a material having substantially no reflectivity for EUV light and a multilayer (ML) stack portion, such as a pillar, formed on the substrate and comprising a plurality of alternating pairs of layers having different refractive indexes so as to reflect EUV light. The pairs have a count equal to or less than 15.
Public/Granted literature
- US20140063490A1 WAVE FRONT ABERRATION METROLOGY OF OPTICS OF EUV MASK INSPECTION SYSTEM Public/Granted day:2014-03-06
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