Invention Grant
- Patent Title: SMU RF transistor stability arrangement
- Patent Title (中): SMU射频晶体管稳定布置
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Application No.: US13901430Application Date: 2013-05-23
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Publication No.: US09335364B2Publication Date: 2016-05-10
- Inventor: James A. Niemann
- Applicant: Keithley Instruments, Inc.
- Applicant Address: US OH Cleveland
- Assignee: KEITHLEY INSTRUMENTS, INC.
- Current Assignee: KEITHLEY INSTRUMENTS, INC.
- Current Assignee Address: US OH Cleveland
- Agency: Marger Johnson
- Agent Thomas F. Lenihan
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
An RF testing method and system by which a DC measurement pathway can also act like a properly terminated RF pathway. Achieving this requires that the output HI, LO, and Sense HI conductors are terminated in a frequency selective manner such that the terminations do not affect the SMU DC measurements. Once all SMU input/output impedances are controlled, as well as properly terminated to eliminate reflections, the high-speed devices will no longer oscillate during device testing, so long as the instruments maintain a high isolation from instrument-to-instrument (separate instruments are used on the gate and drain, or on the input and output of the device). The output of HI, LO and Sense HI conductors are coupled to various nodes of the DUT via three triaxial cables, the outer shieldings of which are coupled to each other and to an SMU ground.
Public/Granted literature
- US20140218064A1 SMU RF TRANSISTOR STABILITY ARRANGEMENT Public/Granted day:2014-08-07
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