Invention Grant
US09336837B2 Low voltage sensing scheme having reduced active power down standby current
有权
低电压感测方案具有降低的有功功率的待机电流
- Patent Title: Low voltage sensing scheme having reduced active power down standby current
- Patent Title (中): 低电压感测方案具有降低的有功功率的待机电流
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Application No.: US14172620Application Date: 2014-02-04
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Publication No.: US09336837B2Publication Date: 2016-05-10
- Inventor: Tae Kim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/08 ; G11C7/06 ; G11C7/12 ; G11C7/22 ; G11C11/4091
Abstract:
A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
Public/Granted literature
- US20140153343A1 LOW VOLTAGE SENSING SCHEME HAVING REDUCED ACTIVE POWER DOWN STANDBY CURRENT Public/Granted day:2014-06-05
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