Invention Grant
US09336896B1 System and method for voltage regulation of one-time-programmable (OTP) memory programming voltage
有权
一次可编程(OTP)存储器编程电压的电压调节系统和方法
- Patent Title: System and method for voltage regulation of one-time-programmable (OTP) memory programming voltage
- Patent Title (中): 一次可编程(OTP)存储器编程电压的电压调节系统和方法
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Application No.: US14666226Application Date: 2015-03-23
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Publication No.: US09336896B1Publication Date: 2016-05-10
- Inventor: John Hsu
- Applicant: Integrated Device Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
- Current Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: Glass & Associates
- Agent Molly Sauter; Kenneth Glass
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16

Abstract:
An integrated circuit is provided that allows for the use of the same supply voltage pin to receive both a normal operating voltage for the integrated circuit (IC) and a one-time-programmable (OTP) memory program voltage sufficient to program an OTP memory located on the integrated circuit. In one embodiment, when an OTP programming voltage is received at a supply voltage pin of the IC, the OTP programming voltage is provided to the OTP memory of the integrated circuit and the OTP programming voltage is regulated to the normal operating voltage level prior to providing the voltage to the internal circuitry of the integrated circuit. As such, the present invention establishes a dual-purpose supply voltage pin, thereby eliminating the need for a separate OTP programming voltage pin on the integrated circuit.
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