Invention Grant
- Patent Title: Buffer stack for group IIIA-N devices
- Patent Title (中): 组IIIA-N设备的缓冲堆栈
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Application No.: US14570703Application Date: 2014-12-15
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Publication No.: US09337023B1Publication Date: 2016-05-10
- Inventor: Qhalid Fareed , Asad Mahmood Haider
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/02 ; H01L29/66 ; H01L29/20 ; H01L29/78
Abstract:
A method of fabricating a multi-layer epitaxial buffer layer stack for transistors includes depositing a buffer stack on a substrate. A first voided Group IIIA-N layer is deposited on the substrate, and a first essentially void-free Group IIIA-N layer is then deposited on the first voided Group IIIA-N layer. A first high roughness Group IIIA-N layer is deposited on the first essentially void-free Group IIIA-N layer, and a first essentially smooth Group IIIA-N layer is deposited on the first high roughness Group IIIA-N layer. At least one Group IIIA-N surface layer is then deposited on the first essentially smooth Group IIIA-N layer.
Information query
IPC分类:
