Invention Grant
- Patent Title: Method of forming pattern of semiconductor device
- Patent Title (中): 半导体器件形成方法
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Application No.: US14445185Application Date: 2014-07-29
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Publication No.: US09337032B2Publication Date: 2016-05-10
- Inventor: Hyung-Rae Lee , Yool Kang , Seong-Ji Kwon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2013-0130382 20131030
- Main IPC: G03F7/26
- IPC: G03F7/26 ; H01L21/027 ; G03F7/40 ; H01L21/308 ; H01L21/311
Abstract:
A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.
Public/Granted literature
- US20150118852A1 METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE Public/Granted day:2015-04-30
Information query
IPC分类:
