Invention Grant
- Patent Title: Apparatus and methods for annealing wafers
- Patent Title (中): 用于退火晶圆的设备和方法
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Application No.: US13215909Application Date: 2011-08-23
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Publication No.: US09337059B2Publication Date: 2016-05-10
- Inventor: Yi-Chao Wang , Yu-Chang Lin , Li-Ting Wang , Tai-Chun Huang , Pei-Ren Jeng , Tze-Liang Lee
- Applicant: Yi-Chao Wang , Yu-Chang Lin , Li-Ting Wang , Tai-Chun Huang , Pei-Ren Jeng , Tze-Liang Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/324 ; H01L21/268 ; H01L21/20 ; H01L21/36 ; H01L21/44
Abstract:
A method includes performing an anneal on a wafer. The wafer includes a wafer-edge region, and an inner region encircled by the wafer-edge region. During the anneal, a first power applied on a portion of the wafer-edge region is at least lower than a second power for annealing the inner region.
Public/Granted literature
- US20130052837A1 Apparatus and Methods for Annealing Wafers Public/Granted day:2013-02-28
Information query
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